| 摘要 |
PURPOSE:To shorten the exposure treatment time by reducing times of the positioning performed at every move of a stage by a method wherein the main exposure range is divided into a plurality of sub exposure ranges, and then the deflection of each electron beam in these exposure ranges is performed by using the first and second deflection means. CONSTITUTION:A buffer memory 12 and a pattern generation part 13 are connected to a CPU 11 in series, and thus, in the generation part 13, coordinate values X and Y in the main field 1 as the design data, and coordinate values (x) and (y) in the subfield 2 which are specified thereby are generated. Next, the main deflection correcting part 14 and the sub deflection correcting part 18 are connected to the generation part 13, then, using the coordinate values X and Y, the electron beam correction coefficient of the field 1 which is previously calculated, and the wafer position correction coefficient which is calculated at every move of the stage, the arithmetic operation is performed by the correcting part 14, and thus a deflection means 17 is driven. In the same manner, each coordinate value in the field 2 is computed by the correcting part 18, and accordingly a static deflection condenser 21 is driven. |
