METHOD FOR REDUCING OXYGEN PRECIPITATION IN SILICON WAFERS
摘要
The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.
申请公布号
WO8302314(A1)
申请公布日期
1983.07.07
申请号
WO1981US01777
申请日期
1981.12.31
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
CHYE, PATRICK, W.;HEARN, ERIC, W.;KULKARNI, MURLIDHAR, V.;MARKOVITS, GARY
