| 摘要 |
PURPOSE:To obtain a resist not causing a large amt. of negative charge accumulation even in high speed depiction using electron beams, by forming a charging prevention film made of a polymer semiconductor on an electron beam resist. CONSTITUTION:A charging prevention film of a semiconductive polymer is formed on an electron beam resist. For example, polyglycidyl methacrylate having about 10<11>ohm.cm volume resistivity which serves as a negative for the electron beam resist, is used, and polyvinyl alcohol applied to this surface has <=10<7>ohm.cm volume resistivity. A solvent, such as ethyl acetate or ethyl ''Cellosolve '', is used for said polyglycidyl methacrylate to form a coated film having a desirable resist film thickness. Said polyvinyl alcohol is extremely hydrophilic, soluble in water, and used in a 8-10% concn. soln. |
