| 摘要 |
PURPOSE:To readily obtain a diode array having preferable performance by forming the array with Schottky barrier diodes, thereby removing the parasitic effect in the p-n junction type. CONSTITUTION:An N type epitaxial layer 2 on a P type Si 1 is isolated with a P<+> type layer 3, N<+> type layers 51-53 are formed in N type layers 21- 23, an anode electrode 14 forming a Schottky barrier made, for example, of Mo, Ti or the like and an ohmic cathode electrode 8 are attached to the N<+> type layer, thereby completing a diode array of Schottky diodes 71, 72, 73.... Since the Schottky barrier diodes do not almost have minority carrier implantation, no parasitic SCR is formed. Since no accumulation of minority carrier occurs, high speed switching operation can be performed, and since a forward voltage is low, its loss can be reduced. |
