发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To obtain high sensitivity characteristics and to enable development with aq. soln., by using a compsn. consisting of a polymer having phenolic hydroxyl groups on the side chains and an azide cross-linking agent as a positive type electron beam resist. CONSTITUTION:A resist layer is formed by coating a base with a compsn. consisting of a polymer contg. repeating units represented by general formulaI, and a compd. having >=2 azide groups as a cross-linking agent. The resist layer is heated or heated and irradiated with UV rays to cross-link the resist, and then it is exposed to electron beams or the like. The parts irradiated with the beams are decomposed on the main chain or the cross-linking chains, and made soluble in water. Since said polymer is hydroxyl groups, an aq. alkaline soln. is used for development. Since the unexposed parts have cross-linked structure, sensitization development is made possible, sensitivity and resolution are raised without causing swelling.
申请公布号 JPS58114032(A) 申请公布日期 1983.07.07
申请号 JP19810209772 申请日期 1981.12.28
申请人 FUJITSU KK 发明人 TODA KAZUO
分类号 G03F7/039;G03F7/008;G03F7/012;G03F7/038;G03F7/20;G03F7/26;G03F7/38 主分类号 G03F7/039
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