发明名称 VAPOR-DEPOSITING METHOD
摘要 PURPOSE:To easily form with good productivity a vapor-deposited film which is excellent in an optical transmitting property and conductivity, without heating a substrate to a high temperature, by evaporating under heating an evaporating substance in a coexistent state of ionized or activated oxidizing gas and inert gas. CONSTITUTION:In a bell jar 1, a substrate 3 is placed together with a back electrode 2, and in a port 9 being in the lower part of the substrate 3, a substance 6 to be evaporated such as In, Sn, etc. is placed. Subsequently, mixed gas of oxidizing gas such as oxygen, etc. and inert gas such as Ar, etc. is made to pass through a discharge tube 7 placed in the outside of the bell jar 1, is activated or ionized, and after that, is fed into the bell jar 1 through a conduct tube, and vacuum vapor-deposition is execured. By this device, the discharge tube 7 is not damaged by heat and gas in case of operation. Also, sheet resistance and light transmission can be held sufficiently, and a set range of discharge power can be taken widely, therefore, a vapor-deposited film such as transparent conductive film, etc. can be formed easily.
申请公布号 JPS58113373(A) 申请公布日期 1983.07.06
申请号 JP19810213163 申请日期 1981.12.28
申请人 KONISHIROKU SHASHIN KOGYO KK 发明人 OOTA TATSUO;SHINDOU MASANARI;MIYOUKAN ISAO
分类号 C23C14/08;C23C14/00;C23C14/32 主分类号 C23C14/08
代理机构 代理人
主权项
地址