发明名称 |
Method for determining the quality of light scattering material |
摘要 |
A method of determining the crystalline quality of heteroepitaxial silicon material, particularly silicon-on-sapphire (SOS) and of homoepitaxial silicon material which uses the light scattering is disclosed. The material is exposed to a beam of light of a selected wavelength, and scattered light having an intensity above a threshold is detected to provide a signal which is used to control the intensity of a display beam of a visual display device. The threshold is varied to thereby vary the display beam intensity so as to provide the minimum intensity of display beam which yields a full display. The value of the thusly adjusted threshold intensity is used as a direct measure of the quality of the material.
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申请公布号 |
US4391524(A) |
申请公布日期 |
1983.07.05 |
申请号 |
US19810244060 |
申请日期 |
1981.03.16 |
申请人 |
RCA CORPORATION |
发明人 |
STEIGMEIER, EDGAR F.;AUDERSET, HEINRICH |
分类号 |
G01N21/95;(IPC1-7):G01N21/01 |
主分类号 |
G01N21/95 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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