| 摘要 |
PURPOSE:To obtain a thin film transistor having a high reliability gate insulation film wherein unnecessary oxygen does not remain in the film, by forming an amorphous Si film at a temperature higher than a gate insulation film forming temperature. CONSTITUTION:After forming a gate electrode on a glass substrate, a gate insulation film is formed (treatmentI) by a conventional technique (source gas: SiH4+O2 at a temperature 200 deg.C). Next, a heat treatment is performed at a temperature of 35 deg.C or over it. (treatment II) By this heat treatment, unnecessary oxygen in the SiO2 film is emitted out of the film, and simultaneously a dense SiO2 film is formed by a rearrangement. After the heat treatment, an amorphous Si film is formed at a treatment temperature of 250-300 deg.C. (treat ment III), then, in the same manner as a conventional technique, an N<+> amor phous Si film, a source electrode and a drain electrode are successively formed, and finally the N<+> amorphous Si film of the channel part is etching-removed resulting in the formation of a thin film transistor. |
