| 摘要 |
PURPOSE:To obtain a semiconductor device wherefrom an active element array, with excellent and stable operational characteristic and a large area and length can be obtained and which allows the light incidence from the element side and substrate side according to necessity, by forming a polycrystalline Si film at a substrate temperature within the range of operational temperatures on a glass substrate or a ceramic substrate, etc. CONSTITUTION:Window opening of source and drain regions is performed on an SiO2 film 3, BF2<+> ions of the energy 150KeV are implanted at a dosage of 3X10<15>/cm<2> and heat-treated at 550 deg.C for 100min, and thereby P<+> layers 4 are formed on source and drain regions. Next, the SiO2 film is removed by leaving a field oxide film 5, and again an SiO2 film 6 is adhered into the thickness of 2,000Angstrom for a gate oxide film by a vapor growing method. Further, after opening electrode contact holes by a photoetching process and evaporating Al over the entire surface, the Al is processed resulting in the formation of a source electrode 7, a drain electrode 8, and a gate electrode 9. Thereafter, a heat treatment at 400 deg.C for 30min is performed in H2 atmosphere. |
