| 摘要 |
PURPOSE:To make it difficult to generate the exfoliation, and form an amorphous Si film having a short growing time by a method wherein an amorphous Si is not directly formed on a transparent insulation substrate, or amorphous Si dioxide film is interposed between the transparent insulation substrate and the amorphous Si. CONSTITUTION:On the transparent insulation substrate 1, a clear electrode 2 is formed, next, using a stainless mask, the amorphous Si film is so formed by a plasma vapor growing method that the amorphous Si film 3 is formed only on the clear electrode 2, and then suitable metallic electrode 4 is formed. As the transparent insulation substrate, a transparent ceramic, various kind of transparent glasses, etc. is used. The clear electrode formed on the transparent insulation substrate is preferably a clear metallic oxide film, and is formed by spraying the solution of metallic salts onto the heated substrate, or oxidizing it after a metal evaporation, or by a sputtering method and applying method. |
