| 摘要 |
PURPOSE:To obtain a negative type photoresist superior in sensitivity and resolution, and developable with an aq. alkaline soln., by using a novolak or polyhydroxystyrene resin low in swelling as a base resin. CONSTITUTION:A negative type photoresist using an aromatic azide compd. for a photosensitive agent, uses as a base resin a novolak resin, i.e. a homo- or copolycondensate of formaldehyde and alkylphenol or polyhydroxystyrene resin (homo- or copolymer) or its mixture low in swelling. As the aromatic azide compd. used for a photosensitive agent is represented by general formula (I) in which X is -N3 or SO2N3; Y is -COO-, -OOC-, -CONH-, -NHCO-, -CO-, -O-, or -NH-; R<1> is lower alkylene, hydroxyalkylene, aminoalkylene; Z is R<4>, -NR<2>2, -OR<3>-, -OCOR<4>, -NHOR<5>, NHCOR<6>, or -CONHR<7>; R<2>, R<6>, R<7> are H or lower alkyl, R<4>, R<5> are lower alkyl, R<3> is H or lower alkyl or-(CH CH)n-R<2>, (n) is 1, 2, 3, 4, or 5; and X links to the p- or m-position to Y-R<1>-Z. Said azide compd. is used in the range of 0.5-150pts.wt. basing on 100pts.wt. base resin. as the developing soln., an aq. alkaline soln. is used. |
