| 摘要 |
PURPOSE:To prevent the punch through of a depletion layer, and to obtain high dielectric resistance by forming a channel-cut region between the two of positive bevel-shaped and negative bevel-shaped p-n junction exposed ends exposed to an annular groove and coating the region with an insulator, while the surface charge density thereof is negative. CONSTITUTION:The two annular grooves 13, 14 in double structure are formed to one main surface 11 of a semiconductor base body 1 with a pair of main surfaces 11, 12 positioned mutually at the reverse sides. A p base layer having impurity concentration higher than an nB layer to which a p-n junction J2 is formed is exposed to the surface surrounded by the annular groove 13, and exposed to the surface of the annular groove 13 in negative bevel shape. A p emitter layer pE to which a p-n junction J1 is formed is exposed to the surface of the external annular groove 14 in positive bevel shape. The channel-cut region 16 is formed between the annular grooves 13, 14, and the surfaces of the annular grooves 13, 14 are coated with glass 2, while the surface charge density thereof is negative. |
