| 摘要 |
PURPOSE:To obtain the semiconductor laser device without mode transition and noises therefrom are low, by arranging a thin absorbing layer into a resonator and selectively oscillating only modes using the absorbing layer as a node in resonant wavelengths in the resonator. CONSTITUTION:N-Ga0.6Al0.4As 12, P-Ga0.8Al0.14As 13, P-GA0.6Al0.4As 14 And P GaAs 15 are grown onto an N GaAs substrate 11, AuGeNi-Au 17 is evaporated at the N side and Cr-Au 16 at the P side, one direction is cloven, the direction rectangular to the direction is scribed and cut out, and a GaAlAs double hetero- junction laser chip is formed. One cleavage plane 18 of the laser chip is coated in order of a SiO2 film 19, a Pt metallic film 20 and a SiO2 film 21. Longitudinal modes can be selected by arranging the absorbing layer for selecting wavelengths between both insulating films 19, 21. |
