| 摘要 |
PURPOSE:To form a radiation shielding film with sufficient film thickness only to a necessary section by forming a frame consisting of a radiation shielding material around a circuit and dropping the shielding material into the frame and solidifying the material. CONSTITUTION:The radiation shielding material in polyimide resin, etc. is applied uniformly onto the surface of a wafer 1, to which the necessary circuit is shaped, through rotary application, etc., a thin film is formed through heat treatment, and the frame 2 is formed around the circuit requiring the shielding of the semiconductor device (wafer) 1 through photoetching, etc. A wiring section 3 is removed from the frame 2. The semiconductor device 1 is assembled and wired, and the radiation shielding material 4 is dropped into the frame 2 and thermally treated. Accordingly, the thick hilm consisting of the shielding material is formed into the frame 2, and the quality of shielding material with sufficient film thickness is obtained only at a position requiring radiation shielding. Wiring 5 can be executed excellently because the shileding material 4 does not adhere on the wiring section 3. |
