| 摘要 |
PURPOSE:To form a submicroscopic pattern with high resoulution under soft X-rays, electron beams or the like and to enhance the dry etching resistance by adding a specified percentage or more of a specified radiaton sensitive high molecular compound as a radiation sensitive resist material. CONSTITUTION:A coating liq. contg. 20-100wt% high molecular naphthyl methacrylate compound contg. a methyl halide group or an unsatd. group represented by formulaI(where X is halogen or a group represented by formula II, l is 0 or a positive integer, m is a positive integer, and n is 1-7) as a radiation sensitive resist material is prepared. The coating liq. is applied to the surface of a wafer, dried and prebaked to form a resist layer. The layer is irradiated with electron beams or X-rays to carry out patternwise exposure, and the unirradiated part which was not cross-linked is removed by development. Thus, a submicroscopic pattern of high accuracy is obtd. It has superior dry etching resistance, and a resist suitable for use in the manufacture of super LSI, etc. is obtd. |
