ASSIGNING METHOD FOR MESA DIRECTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PURPOSE:To assign the mesa direction of a titled single crystal easily by providing two kinds of orientation flats in the long diameter and short diameter directions of the section in the shouldering part of a group III-V compd. semiconductor ingot grown in <100> directions. CONSTITUTION:An orientation flat 11 which is in parallel with the long diameter direction (a) in the shouldering part 3 of a group III-V compd. semiconductor ingot 1 of a right circular cylindrical shape having a seed 2 at the top end grown in <100> directions by a pulling method and is at a right angle to a mesa direction M and an orientation flat 10 which is in parallel with the short diameter direction (b) and the direction M or the domains equivalent to said flats are provided to a wafer 4 cut out from the right circular cylindrical part of said ingot 1, whereby the mesa direction of the wafer and the front and rear of the wafer are indicated.