| 摘要 |
PURPOSE:To improve the high sensitivity and high S/N ratio by forming an amorphous Si layer contg. H and halogen on a support so that the 1st layer region contg. O uniformly in the thickness direction and the 2nd layer region cong. B are laminated. CONSTITUTION:A cylindrical support 101 of Al or the like is set in the evacuated reaction chamber of a glow discharge decomposition apparatus. By operating valves, gaseous SiH4 diluted with He(SiH4/He), B2H2/He, Si2H6/He, NO and SiF/ He are fed onto the surface 104 of the support 101 to form an armophous Si layer 102 contg. H and F or other halogen by a glow discharge decomposition method. At this time, by laminating the 1st layer region contg. O in an uniformly distributed state in the thickness direction and the 2nd layer region contg. B so that they have a common region partly, a photoconductive member 100 with high sensitivity and a high S/N ratio is obtd. |
