| 摘要 |
PURPOSE:To form a layer of a single crystal insulated perfectly from a lower electrically conductive layer by regularly arranging a plurality of thin chips of a single crystal on an insulating film, forming a polycrystalline or amorphous layer on the chips, and carrying out heat treatment. CONSTITUTION:A plurality of thin chips 9 of a semiconductor single crystal having fixed face orientation are arranged regularly and equidistantly on an insulating layer 5 on a semiconductor substrate 4 while making the face orientation uniform, and a polycrystalline or amorphous layer 10 is formed on the chips 9. The crystallization of the layer 10 in the vicinity of the single crystal 9 is accelerated by local annealing with laser beams irradiated on the surface of the layer 10, and by moving the substrate 4 into a furnace 12 kept at a high temp. giving a molten state at a constant speed, the crystallization is further accelerated. By this method a single crystal can be grown in a state insulated perfectly from a lower electrically conductive layer, and the formation of a laminated element having a multilayered structure is facilitated. The crystal growth can be carried out without using a grating structure requiring accuracy. |
