| 摘要 |
PURPOSE:To simplify the manufacturing process as well as to obtain the buried type element of high performance by a method wherein an insulating thin film material having a striped type window is provided on the first conductive type substrate, and a clad layer, consisting of the first or the second conductive type active layer and the second conductive type clad layer and a contact layer, are laminated one upon another. CONSTITUTION:An amorphous insulating material thin film 2 such as SiO2 is grown on an N type InP substrate 7 using CVD method, and an exposed surface 13 is generated on the substrate 7 corresponding to a strap forming region by performing a photolithographic method and a chemical etching method. Then, utilizing the characteristic wherein a single crystal layer alone is generated on the exposed surface 13 when an epitaxial growing method is performed, an N type first clad layer 6, an In1-x, Gax, ASy, P1-y, layer 3 are laminated and epitaxially grown on the whole surface. Through these procedures, the desired striped buried structure is obtained, and a P type and an N type electrodes 3 and 9 are coated on the front and the back sides. |
