| 摘要 |
PURPOSE:To perform vapor phase epitaxy by a method wherein a vertical furnace body is held in a housing, and a reaction tube having a freely open and closed vertical gas inlet and outlet at the upper end is accommodated in the furnace body, and a substrate holder is freely rotated and ascended an well as descended. CONSTITUTION:A substrate holder 3 is loaded at the upper part of a box under N2 atmosphere and is inserted in a reaction tube 43 with a mechanism 80. A furnace body is pushed up together with the reaction tube 43 with a hydraulic mechanism 60, and a manifold 45 is pressed to the furnace body. Furthermore, an opening section is closed with a cover 65 through a mechanism 73, and reaction gas is supplied 51 to rotate 71 the holder 3 in the reaction tube 43. The mechanism 73 is connected to a screw feed mechanism 80 with a supporting arm 65 and is ascended as well as descended. After epitaxial formation, the furnace body is descended to contact with a manifold 47 and to exhaust the reaction gas. When the holder 3 is accommodated or taken out with the mechanism 80, a semicircular shield plate 98 instead of the cover 65 is operated to prevent gas or heat from radiation. This constitution easily forms the temperature distribution of the reaction tube and can uniformly smooth gas flow. An epitaxial device with easy ascent and descent and rotation of the holder 3 and requiring a small occupied floor area is obtained. |
