| 摘要 |
PURPOSE:To prevent an increase in total inverse recovery time for the antiparallel diode and the resistor-connected transistor of the titled semiconductor device by a method wherein the diode, which is in series with a resistor and in parallel to a base-emitter junction and having the barrier layer voltage lower than that which exists between a base and an emitter, is connected inbetween the base and the emitter of the transistor. CONSTITUTION:A resistor 3 and a diode 6, which will be in forward direction toward the base and the emitter, are connected in series inbetween the base and the emitter of the transistor, and a diode 2 is connected in parallel inbetween the emitter and the collector. According to this constitution, as the diode 6, a Schottky barrier diode having the forward voltage lower than that of the base- emitter saturation voltage of the transistor 1 is used, and when a base current runs to an emitter terminal E from a base terminal B, a resistor 3 functions as an inserted resistor. Also, when the voltage, wherein positive elecricity is on the terminal E and negative electricity is on the terminal C, the current running from the terminal E to B is interrupted by the diode 6. |
