| 摘要 |
PURPOSE:To obtain a multiinput IGFET with a small occupation area by a method wherein a drain region and two source regions, facing each other and leaving an equivalent distance to said drain region, are formed on the same semiconductor substrate, and the gate electrode for the first and the second input signal and gate electrode for bias application are provided between the above-mentioned regions through an insulating film. CONSTITUTION:An N<+> type drain region 11 is formed by diffusion on a P type Si substrate 10, and two N<+> type source regions 12 and 13 are provided corresponding to the region 11 leaving the same distance. Then, polycrystalline Si gate electrode 14 for the first signal input is provided on the substrate 10 at a point close to the region 12 located between the region 11 through the intermediary of an SiO2 film 20, and the gate electrode 15 for the second signal input is provided at a point close to the region 13 in the same manner as above. In addition, the polycrystalline Si gate electrode 16 for bias voltage application is provided between the intermediate region located between the region 11 and electrodes 14, 15 and the end part of the electrodes 14 and 15 through the intermediary of an insulating film 20. Subsequently, an Al wiring is connected to the regions 12 and 13 using a contact hole 17, and an Al wiring 19 is also attached to the region 11 through the intermediary of the hole 17. |
