发明名称 |
Process for forming a thin phosphorus layer on silicon substrates by evaporating H3PO4 |
摘要 |
Process for forming a phosphorus dopant on an oblate piece of silicon for the purpose of subsequently forming a p-n boundary layer by evaporating phosphoric acid at atmospheric pressure to form an essentially continuous film and then heating the film to form a phosphorus/silicon glass coating which does not impair a deposited antireflection layer.
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申请公布号 |
DE3150420(A1) |
申请公布日期 |
1983.06.30 |
申请号 |
DE19813150420 |
申请日期 |
1981.12.19 |
申请人 |
SOLAREX CORP. |
发明人 |
D. KOVAL,TIMOTHY |
分类号 |
C04B41/50;C04B41/85;C23C14/58;H01L21/225;H01L21/316;(IPC1-7):C23C13/04;C30B21/02;C30B29/06;H01L21/20 |
主分类号 |
C04B41/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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