Semiconductor device comprising a metallic conductor.

摘要

A material having metallic conduction (hereinafter referred to as a "metallic material" is heteroepitaxially grown in the laminar form on an insulating substrate (11) by molecular beam epitaxy. The resulting metallic material layer (12) is shaped in a desired pattern, whenever necessary. At least a semiconductor layer (13) is heteroepitaxially grown on the metallic material layer (12) and a semiconductor device is fabricated using the semiconductor layer (13). In this case, the metallic material layer (12) is used as one of the electrodes of the semiconductor device.