发明名称 |
Method of structuring with metal oxide masks by reactive ion-beam etching |
摘要 |
Very fine circuit structures in microelectronics are produced by first applying a thin metal oxide layer uniformly over an entire surface of a layer to be etched, then applying a resist layer uniformly over the entire metal oxide layer and structuring such oxide layer by ion-beam etching and, utilizing the structured oxide layer as a mask, performing a dry-etching with an ion beam of the metal layer lying thereunder so as to attain structures having very unfavorable resist height to etching depth ratios.
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申请公布号 |
US4390394(A) |
申请公布日期 |
1983.06.28 |
申请号 |
US19820338605 |
申请日期 |
1982.01.11 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
MATHUNI, JOSEF;UNGER, KARIN |
分类号 |
H01L21/302;G03F7/09;G03F7/40;H01L21/033;H01L21/3065;(IPC1-7):C23F1/02;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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