| 摘要 |
PURPOSE:To relieve the strain generated when operation and thus contrive the improvement of the reliability, by inserting a metal plate between a diamond and a semiconductor element. CONSTITUTION:A diamond heat sink 2 metallized on the surface by Ti-Au is pressed fit to the base part of an electrode terminal 1, then the metal plate 8, 10-50mum thick is compression-bonded thereon, and further the semiconductor element 2 is adhered on the metal plate. An electrode ring 5 provided on a dielectric ring 4 is electrically connected to the semiconductor element 3 by lead wires 6, and a cap 7 is welded on the upper surface part of the electrode ring 5 resulting in hermetic seal. When a soft metal plate is inserted between the diamond heat sink and the semiconductor element in this manner, the thermo compression bonding is performed by heating normally to 300-400 deg.C. Therefore, since the thermal strain generated from the difference of coefficient to thermal expansion between a diamond and a semiconductor element, the diamond and the compression bonding wedge are rigid bodies, the mechanical strain imposed on the semiconductor element when compression bonding, the thermal strain when pulse operation, etc. are relieved by this metal plate. |
