| 摘要 |
A substrate bias-voltage generator is comprised of an oscillator, and a charge pumping circuit, driven by the oscillator via a coupling capacitor, which transfers accumulated electric charges, out of the semiconductor substrate. The oscillator frequency is varied in accordance with the variation of the voltage level of the semiconductor substrate, preferably by means of an RC circuit, fabricated by a MOSFET variable resistance (R) and a capacitor (C), within a ring oscillator or a multi-vibrator. The gate electrode of the MOSFET variable resistance is directly connected to the semiconductor substrate.
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