Monolithic microwave amplifier having active impedance matching

摘要

A monolithic microwave amplifier fabricated on a GaAs substrate utilizes MESFETs to provide both gain and impedance matching. The source of a first MESFET is connected to an input terminal of the amplifier and its drain is connected to an interstage matching network. The gate of a second MESFET is connected to the output of the interstage matching network and its source is connected to the output terminal of the amplifier. Suitable voltages are applied to the MESFETs to bias the devices appropriately. The gate of the first MESFET and the drain of the second MESFET are connected in common with the grounds of the amplifier's input and output ports. In a second embodiment, additional gain is obtained by providing a third MESFET with a common source connection between the first and second MESFETs.