| 摘要 |
PURPOSE:To prevent the boring and the crack of a protection film, by tapering the side wall of an Al alloy. CONSTITUTION:On an oxide film 2 on a semiconductor substrate 5, the Al alloy 1 is adhered over the entire surface and etched by a Reactive Ion Etching. In this process, the said wall 8 of the Al alloy 1 is etched vertical to the oxide film 2. Next, a photo resist 9 is adhered over the entire surface on the Al alloy and the oxide film 2. Then, the photo resist 9 is removed. As the removal device, the RIE is used. First, only oxygen is injected into the RIE. As corner parts 10 are exposed, the amount of oxygen flow are gradually decreased, and the amount of chlorine gas flow is gradually increased resulting in the control of the flow amount so that corner parts 10 are all etched. When the process is finished, the side wall 8 is tapered, and accordingly the Al alloy 1 turns as in the fig. d. |
