| 摘要 |
PURPOSE:To decrease voltage drop and to facilitate to obtain high density integration, by arranging a second power source wiring in the vicinity of a first power source wiring. CONSTITUTION:A diffused layer 1 is provided on a semiconductor substrate, polysilicon gates 2 are provided through an insulating layer, and the power source lines Vcc, ground lines GND, and an output taking out line C are provided by Al and the like through the insulating film. Said lines are connected to the diffused layer 1 through a contact hole 3 provided in the insulating film. Input terminals A and B are provided at one end of each of the gates 2. Signal lines phi1, phi2, and phi3 are connected to the other ends. In this semiconductor integrated circuit device, the power source lines Vcc are made to be as the first power source wiring and the ground lines GND are made to be the second power source wiring. The second power source wiring GND is arranged in the vicinity of the first power source wiring Vcc. In this constitution, the voltage drop due to the diffused layer 1 is decreased and the freedom in layout is increased. |
