| 摘要 |
<p>PURPOSE:To omit wiring space for laying and to obtain freedom in wiring, by using a second metal layer, which shields light for the active region of an image sensor IC instead of complicated wiring included in a first metal layer. CONSTITUTION:A window is provided in an SiO2 film 4 on a silicon chip. Patterning is performed for a sensor part 3, a signal processing part, a logic part, and the like, with the first wiring metal layer 5. Then, an insulating layer 6 of SiO2, Si3N4, or the like is formed on the active region 2, i.e. the entire part corresponding to the signal processing part and logic part, by a low temperature CVD method and the like. Thereafter, a metal layer 7 ofr screening and wiring, which is a second layer, is applied so as to cover the active region 2 of the IC through the insulating layer 6 and so that it is connected with the first layer wiring metal layer through a contact hole 8. As a result, power source lines and ground lines, which have been forced to be laid in a complicated pattern in the first layer wiring, can be laid in the second layer wiring.</p> |
