| 摘要 |
PURPOSE:To obtain a negative type resist having high reliability efficiently, by placing a base plate on the grounded electrode of parallel flat plate type electrodes facing each other in a reaction chamber, and forming a polymerization film on said base plate by a small amt. of high frequency wave power, in forming a resist film by a plasma polymn. method. CONSTITUTION:A silicon base plate 2 is placed on a stand in a reaction chamber 1, the stand is also used as a grounded electrode, cooled by passing cooling water, and a flat plate electrode 3 is connected through a regulation circuit 4 with a high-frequency wave power supply 5. The inside of the chamber is evacuated to 2X10<-5>Torr, and a gaseous monomer is introduced from a monomer source 8 through a valve 9 and a tube 6 together with a carrier gas supplied through a valve 10. <=1W/cm<2> high frequency wave power is applied to the electrode 3 and the electrode used also as the stand to produce a plasma polymn. film on the base plate 2, thus permitting negative type resist film soluble in a developing soln. to be efficiently formed in a short time, and this resist film to be suitable for the lithographic technique usable for fabrication of semiconductor integrated circuits. |
