| 摘要 |
PURPOSE:To prevent the effect of etching on an i-layer as a high resistance layer, and to obviate the degradation of the characteristics of a diode by adjusting the order of the processes of the formation and etching of each layer of an amorphous silicon film in a close adhesion type line sensor. CONSTITUTION:Cr or Al is evaporated onto a substrate, and an N type a-Si layer 2 is formed through a plasma CVD method. A lower electrode 1 and the N type a-Si 2 are obtained by etching the N type a-Si layer and Cr or Al as the shape of the lower electrode through photolithography. AnItype amorphous silicon 3 is formed in predetermined shape through a metallic mask. P type amorphous silicon is also formed at that time. An i type a-Si 4 is shaped only by etching P type a-Si. Characteristics are not affected even when i type a-Si is etched to some extent at that time. an upper electrode 5 is shaped to P type a-Si 4, and the diode is completed. |
