| 摘要 |
PURPOSE:To enable the axial center of an electron lens to coincide with the central axis of a device easily and precisely, by scanning electron beam to detect a secondary electron reflected image at the predetermined position of a pattern, next changing the lens intensity to detect the reflected image again, and transferring the axis of the electron lens so that the turning center can be the center of the reflected image. CONSTITUTION:On Si substrate 21, for instance, a recess with a pitch l which is 500mum both longitudinally and laterally, 1mum in depth, several mum in width is formed to be a standard pattern and this standard sample is placed on a setting stand 5. Thereafter, electron beam scans and collides with the edge of the standard pattern's recess, then the secondary electrons are reflected. The secondary electrons are detected by a detector 9 and projectd on a cathode-ray tube 11. Next, the intensity of an electron lens 4 is changed, and by scanning again electron beam the reflected image at the predetermined position is detected. During repeating this operation several times, the turning center position of a moving reflected image is detected, and the axis of the electron lens is transferred so that the turning center can be the center of the reflected image. Consequently, the both centers can coincide with each other precisely and easily. |
