| 摘要 |
PURPOSE:To obtain the thin film transistor having excellent controllability over electric characteristics by a method wherein the title transistor is composed of an insular n<-> channel region on an insulated substrate, the n<+> source and the drain regions located at both ends of said channel region and the p<+> gate region provided adjoining to the channel region, and the n<-> channel region is formed by performing a beam annealing. CONSTITUTION:An n<+> source region 13 and an n<+> drain region 23 are provided on an insulated substrate 1 pinching an n<-> channel region 12. These regions 12, 13 and 23 are formed in island-like shape. A p<+> gate region 15 is provided in such a manner that the upper surface and the side face of a part of the n<-> channel region 12 are surrounded by the region 15, and a source wiring 17, a drain wiring 27 and a gate wiring 37 are adjoiningly formed on the source, drain and gate regions 13, 15 and 23 using the first conductive film. Insulating film coated Si and metal are used as the insulated substrate 1 besides the insulating material such quartz, glass and the like. A single crystal or polycrystalline Si thin film, which is beamannealed with a laser beam and the like, is used for the n<-> channel region 12.
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