PROCEDE DE REALISATION D'UNE DIODE EN SILICIUM AMORPHE, EQUIPEMENT POUR LA MISE EN OEUVRE D'UN TEL PROCEDE ET APPLICATION A UN DISPOSITIF D'AFFICHAGE A CRISTAL LIQUIDE

摘要

The diode in amorphous silicon has at least three layers of different doping levels deposited on a substrate. During fabrication there is a stage of deposit by the thermal decomposition of a gaseous mixture and a thermal treatment stage in an atmosphere with a density greater than that of atomic hydrogen, both stages taking place at a temp. less than the crystallisation temp. of silicon. The thermal decomposition stage to produce a p-i-n type diode includes a first stage of depositing a p+ type layer from a gaseous mixture of molecular hydrogen, and silane or a mixture of polysilanes and diborane, a second stage of depositing an undoped layer from a gaseous mixture containing molecular hydrogen and silane or a mixture of polysilanes and a third stage of depositing a layer type n+ from a gaseous mixture of molecular hydrogen and silane or a mixture of polysilanes and phosphine. The thermal treatment stage either takes place after the deposit of the last layer of amorphous silicon or after one of the intermediary layers of amorphous silicon. In thermoelectric displays using liquid crystals. The diodes have electrical characteristics and physical dimensions allowing them to be directly joined onto the substrate of the screen of visualisation.