| 摘要 |
PURPOSE:To remarkably simplify the constitution of photo thyristor while making possible the ON function in the vicinity of zero cross by forming a zero cross photo thyristor with a first and second transistors and an FET. CONSTITUTION:An N<-> type layer 3 which will become the base of a second transistor is formed by the epitaxial growth on a P type Si substrate 4 which will become the emitter region of a second transistor and a P type region 2 which will becomes the base of a first transistor is formed therein. An N<+> type region 1 which will become the emitter of a first transistor is provided at the center of the region 2 and an N<+> type region 5 for FET is formed like a ring with the specified interval 2a. Thereafter, an Al gate electrode 13 is formed like a ring at the interval area 2a through a gate insulating film 12 and the surfaces of regions 2 and 5 are connected by a ring-shaped conductor 16. A cathode electrode 10 is mounted to the region 1 and an anode 11 is deposited to the rear side of substrate 4. With such structure, the light beam 4' is applied to the light sensible surface 8 of the surface 9. |
