| 摘要 |
PURPOSE:To reduce an OFF current by providing an offset gate region consisting of the low impurity region of the same conductivity type whie said region is placed in contact with the source region under the source electrode or with the drain region under the drain electrode in case a thin film transistor is formed with a polycrystalline semiconductor thin film. CONSTITUTION:A polycrystalline semiconductor thin film 18 is allowed to grow in the specified dimension on an insulating translucent substrate 17 and the source region 19 and drain region 20 are formed by the diffusion method at both ends of such thin film. Then, the surface and side of this thin film 18 are entirely covered with a thin gate insulating film 21 and a gate electrode 22 is mounted to the center thereof. Thereafter, an inter-layer insulating film 23 is deposited on the entire part thereof including them, a window is opened while the region 19 corresponds to the region 20 and the source electrode 24 and drain electrode 25 are mounted respectively. In such constitution, the offset gate region 26 in the same conductivity type as the regions 10 and 20 and with a low impurity concentration is provided within a thin film 18 between the regions 19 and 20 located in both sides of said gate electrode 22. Thereby, an OFF current less depends on gate voltage. |
