| 摘要 |
PURPOSE:To freely obtain a transistor on the second layer without relation to the layout of the first layer by covering a transistor on the first layer formed on a semiconductor substrate through an insulating film, a polycrystalline semiconductor layer is formed thereon and it is recrystallized through irradiation of laser beam thereto. CONSTITUTION:An MOS transistor 102 consisting of the source region 103, drain region 104, Mo metal wirings 105 and 106, polycrystalline Si gate 107 and oxide film 108 is formed on the P type Si substrate 101, and an SiO2 film 109 and an Mo film 110 which prevents the laser beam to reach the transisto 102 are stacked and deposited on the entire part thereof. Next, the SiO2 film 111 is deposited again on the film 110, a polycrystalline Si film 112 is deposited thereon, it is covered with and Si3N4 film 113, and the film 113 other than the single crystal area of film 112 is removed. Thereafter, the exposed area of film 112 is oxidized into the SiO2 film 115, unwanted film 113 is removed, the laser beam is irradiated thereon. A film 114 consisting of the film 112 exposed here is single- crystal film 116. |
