| 摘要 |
An n+ type buried grid layer (16), at the interface of a p+ type semiconductor substrate (12) and a p type epitaxial layer (14), serves to absorb (collect) alpha-particle-induced charge and other stray charge in the epitaxial layer and substrate. The grid layer is spaced sufficiently from a major surface (18) of the epitaxial layer so as not to have any significant adverse effect on circuits and/or devices fabricated on the major surface. Circuits and/or devices fabricated on the major surface of the epitaxial layer are thus at least partly protected against loss of information due to alpha particle hits and other stray leakage generators. When no epitaxial layer is used, the buried grid is formed below the major surface of the substrate into which circuits and/or device are fabricated. <IMAGE> |
