| 摘要 |
PURPOSE:To obtain high sensitivity, high dimensional controllability, and high resolution, by using a 3-layered resist having an interlayer made of a substance higher in electron scattering coefft. and specfied in thickness, and an upper layer made of electron beam resist. CONSTITUTION:A first layer 3 of ''Az resist '' or the like for reducing influence of difference in level of a base plate 1 and smoothing the surface is provided on the base 1. When the base 1 is small in difference in level, the first layer 3 is not necessary. An interlayer formed on the layer 3 is composed of a substance having high electron scattering coefft., such as Pt, Mo, W, Ta, or Au, and satisfies the following condition: t>=0.028X(Va/rho)<1.75>, where (t) is thickness of the interlayer 4, rho is density of the substance, and Va is energy of irradiation particles. An upper layer is above the interlayer 4 with respect to the base 1, has <=0.4mum thickness and serves as an electron sensitive resist. This electron resist may be a positive or negative type. |
