| 摘要 |
PURPOSE:To obtain a high-quality deposition film, preventing the formation of powdery silicon compound, by heating the discharge electrode in a deposition chamber for the deposition of hydrogenated silicon film using glow discharge. CONSTITUTION:The substrate 105 placed on the electrode 104-1 having a heater 107 for heating the substrate, and the counter electrode 104-2 having a heater 108, are arranged in the deposition chamber 101. The chamber 101 is evacuated, and supplied with raw material gas through the pipe 115. The gas is decomposed by the glow discharge generated between the electrodes 104-1 and 104-2, and the produced chemical species are deposited on the substrate 105 heated at about 200-400 deg.C to obtain a hydrogenated silicon film. In the above process, the electrode 104-2 is heated with the heater 108 at about >=100 deg.C to effect the deposition of the undeposited chemical species on the electrode and prevent the formation of powdery silicon compound. |
