| 摘要 |
PURPOSE:To form an amorphous Si film having uniform thickness on a substrate, by dividing the discharge electrode into segments, and supplying each segment electrode with constant electric current. CONSTITUTION:The discharge electrode 14 is composed of segment electrodes 14a, 14b and 14c separated from each other with insulating rings 15 and 16. The segment electrodes are connected with the respective high-frequency electric sources P1, P2 and P3, and the electric current supplied to each segment electrode is controlled to a constant level by the ammeter 18 and the feed-back circuit 18a (or 19 and 19b, 20 and 20c). The raw material gas fed through the inlet pipe 26 is transferred through the path 24 and the perforations 25 along the directions of the arrows, and discharged through the outlet pipe 23 by suction pumps 21 and 22. In the course of the above process, the gas is decomposed by glow discharge in the chamber 11, and an amorphous Si film is deposited on the substrate 12. Since the electric current of each segment electrode is controlled to a definite level, a film having uniform thickness can be obtained. |
