发明名称 |
Method of manufacturing pn junction in group II-VI compound semiconductor |
摘要 |
A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing therein gold which is a p-type impurity or by forming therein a gold alloy in an inert gas atmosphere. This impurity has such a high diffusion velocity as can suppress the vaporization, from ZnSe crystal, of Se atoms having a vaporization speed lower than the diffusion speed of gold, and thus desired pn junction can be formed.
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申请公布号 |
US4389256(A) |
申请公布日期 |
1983.06.21 |
申请号 |
US19810270816 |
申请日期 |
1981.06.05 |
申请人 |
NISHIZAWA, JUN-ICHI |
发明人 |
NISHIZAWA, JUN-ICHI;ITO, KAZUOMI |
分类号 |
C30B31/02;H01L21/368;H01L21/383;H01L21/385;H01L21/40;H01L29/227;H01L33/28;H01L33/40;(IPC1-7):H01L21/32 |
主分类号 |
C30B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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