| 摘要 |
PURPOSE:In a vacuum vessel, a mixed layer of 2 or more elements are formed in one atomic layer to effect high-efficiency production of epitaxial layers for semiconductor units containing conduction type-deciding impurities. CONSTITUTION:In the vacuum vessel, a silicon base 11 is placed and SiCl4 and a compound of BCl3, PCl5 or the like or their mixture are fed to allow an Si single atomic layer 12 to grow on the Si base 11 epitaxially and simultaneously to form the atomic layer of elements as conduction type-deciding impurities such as B or P in the Si single atomic layer 12. This process gives a semiconductor layer in which the conduction type-deciding element is oriented not only in the vertical direction but also in the horizontal one and the resultant layer is suitable for use as an epitaxial layer for semiconductor units. |
