| 摘要 |
PURPOSE:To increase the rate of deposition, and to obtain the titled image- forming material having high sensitivity to both positive and negative charges, by depositing amorphous silicon carbide on a substrate using a raw material gas added with inert gas and B2H6. CONSTITUTION:A glow discharge deposition chamber furnished with a substrate (e.g. Al plate) is evacuated to about 10<-6> Torr, and the temperature of the substrate is maintained at about 150-250 deg.C. An amorphous silicon carbide monolayer is deposited on the substrate by the glow discharge generated by an about 80-500W radiofreqeuncy power supply while introducing SiH4, CH4, C2H4, H2, B2H6 and inert gas (e.g. He, Ne, Ar, etc.) into the deposition chamber and keeping the pressure to about 0.5-50Torr. The flow ratios of CH4, C2H4, H2, B2H6 and inert gas to SiH4 are about 0.2-0.8, about 0.1-0.6, about 0.5-5, about 0.0001 and about 0.1-5, respectively. |
