| 摘要 |
<p>PURPOSE:To obtain a high density semiconductor device by forming bonding pads on the surfaces and side walls of a semiconductor substrate other than the surface on which the internal circuit is formed. CONSTITUTION:Apertures 3 are formed selectively adjoining to scribe lanes 2 on a semiconductor substrate 1. Then insulating films 4 are formed. Then polycrystalline silicon films 5 are formed to fill the apertures 3. Then interconnection wirings 6 between a circuit in the semiconductor device and the surfaces of the films 5 are formed. After a protective film 7 is formed, the substrate 8 at the scribe line part is etched to the depth deeper than the depths of the filling polycrystalline silicon films described above and the insulating films formed on the side walls of the apertures are removed by etching and the side walls of the films 5 are exposed to be used as bonding pads 9. In order to make the connsctions between the pads 9 and external metal wirings more secure, after the side walls of the films 5 are exposed, a high melting-point metal film is formed over the whole surface and silicide layers 14 are formed by the reaction with the polycrystalline silicon films. With this constitution, as the pads 9 are formed on the surfaces and side walls of the substrate other than the surface on which the internal circuit is formed, a high density semiconductor device can be obtained.</p> |
