| 摘要 |
PURPOSE:To remove a photo sensitive resin film precisely by the development and rinse treatment irrelevant to the loop and the node of a standing wave to be generated on a silicon dioxide film having a step part by a method wherein an exposed positive type photo sensitive resin film is formed previously on the surface of a substrate. CONSTITUTION:The first positive type photo sensitive resin film 12 is formed on the semiconductor substrate or the substrate 11 of thin film, etc., light l1 is irradiated to the whole surface to make the first photo sensitive resin film 12 to be exposed, and is made as soluble to developer to be treated afterward (figure a). Then a second positive type photo sensitive resin film 13 is applied stacking on the first positive type photo sensitive resin film 12 (figure b) to perform selective light irradiation l2 according to the projection exposure method, and exposed regions 14 are formed selectively in the resin film 13 (figure c). Then the first and the second photo sensitive resin films 12, 13 at the exposed regions 14 are removed selectively by the usual development and rinse treatment to form opening parts 15 (figure d). Accordingly defects such as the left-over of resist and the difference of pattern width are not generated at the opening parts 15. |
