| 摘要 |
<p>PURPOSE:To obtain the semiconductor device enabled to obtain sufficient inside insulation, as well as greatly facilitated for assembling by a method wherein between a metal plate to be mounted with a semiconductor element and a metal plate for radiation of heat to constitute a part of an outside case is adhered to be connected, and is insulated by a low melting point glass layer. CONSTITUTION:The transistor to be used as the semiconductor element 1 is adhered to the nickel plated copper electrode plate 3 by a collector metal electrode side PbSn solder material 2 consisting of a Ti/Ni layer, and moreover the substrate electrode 3a having a nickel plating layer 3b is adhered to the radiator plate 6a of the outside case having a nickel plating layer 6b by the low melting point glass layer 7. Accordingly, because only the low melting point glass layer 7 excepting the nickel plating layer 3b, 6b is interposed between the substrate electrode 3a and the radiator plate 6a consisting of the same metal, and the low melting point glass layer 7 is constituted of nearly symmetrical structure at the adhering parts although thickness and the area are different, uniform adhesion can be realized easily.</p> |
