| 摘要 |
PURPOSE:To provide the inspection method of the semiconductor substrate enabled to enlarge the throughput at the inspection process of semiconductor device by a method wherein the inspection process is performed jumping over a semiconductor chip having pattern inferiority. CONSTITUTION:After a pattern inspection is finished, the semiconductor substrate is advanced to the next progress of semiconductor process of etching, oxidation, etc. The mask positioning process and the pattern inspection are repeated for plural times thereafter, and the semiconductor devices are formed on respective chips on the semiconductor substrate. The semiconductor substrate formed with the semiconductor devices of the plural number is advanced next to the inspection process of the semiconductor devices of the respective chips. At this time, the semiconductor substrate formed with the semiconductor devices is set in a tester 4, and discrimination of quality of the first chip is performed at first comparing with address output of an inferior chip read from a memory unit. When the chip thereof is inferior, discrimination is advanced to the next chip without performing the inspection of electric characteristic. When the chip thereof is the article of good quality, and the inspection of electric characteristic results in good, discrimination is advanced to the next chip, and when the result of inspection is inferior, after the address of the chip thereof is inputted to the memory unit mentioned above to be stored as an inferior article, discrimination proceeds to the next chip. |
